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SIE882DF-T1-GE3

SIE882DF-T1-GE3

For Reference Only

Part Number SIE882DF-T1-GE3
PNEDA Part # SIE882DF-T1-GE3
Description MOSFET N-CH 25V 60A POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE882DF-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE882DF-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE882DF-T1-GE3, SIE882DF-T1-GE3 Datasheet (Total Pages: 10, Size: 206.08 KB)
PDFSIE882DF-T1-GE3 Datasheet Cover
SIE882DF-T1-GE3 Datasheet Page 2 SIE882DF-T1-GE3 Datasheet Page 3 SIE882DF-T1-GE3 Datasheet Page 4 SIE882DF-T1-GE3 Datasheet Page 5 SIE882DF-T1-GE3 Datasheet Page 6 SIE882DF-T1-GE3 Datasheet Page 7 SIE882DF-T1-GE3 Datasheet Page 8 SIE882DF-T1-GE3 Datasheet Page 9 SIE882DF-T1-GE3 Datasheet Page 10

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SIE882DF-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs145nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6400pF @ 12.5V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (L)
Package / Case10-PolarPAK® (L)

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