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SIHA22N60EF-GE3

SIHA22N60EF-GE3

For Reference Only

Part Number SIHA22N60EF-GE3
PNEDA Part # SIHA22N60EF-GE3
Description MOSFET N-CHAN 600V TO-220 FP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,024
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHA22N60EF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHA22N60EF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHA22N60EF-GE3, SIHA22N60EF-GE3 Datasheet (Total Pages: 8, Size: 152.36 KB)
PDFSIHA22N60EF-GE3 Datasheet Cover
SIHA22N60EF-GE3 Datasheet Page 2 SIHA22N60EF-GE3 Datasheet Page 3 SIHA22N60EF-GE3 Datasheet Page 4 SIHA22N60EF-GE3 Datasheet Page 5 SIHA22N60EF-GE3 Datasheet Page 6 SIHA22N60EF-GE3 Datasheet Page 7 SIHA22N60EF-GE3 Datasheet Page 8

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SIHA22N60EF-GE3 Specifications

ManufacturerVishay Siliconix
SeriesEF
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs182mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1423pF @ 100V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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