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SIHB065N60E-GE3

SIHB065N60E-GE3

For Reference Only

Part Number SIHB065N60E-GE3
PNEDA Part # SIHB065N60E-GE3
Description MOSFET E SERIES 600V D2PAK (TO-2
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 14,004
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB065N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB065N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB065N60E-GE3, SIHB065N60E-GE3 Datasheet (Total Pages: 9, Size: 192.18 KB)
PDFSIHB065N60E-GE3 Datasheet Cover
SIHB065N60E-GE3 Datasheet Page 2 SIHB065N60E-GE3 Datasheet Page 3 SIHB065N60E-GE3 Datasheet Page 4 SIHB065N60E-GE3 Datasheet Page 5 SIHB065N60E-GE3 Datasheet Page 6 SIHB065N60E-GE3 Datasheet Page 7 SIHB065N60E-GE3 Datasheet Page 8 SIHB065N60E-GE3 Datasheet Page 9

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SIHB065N60E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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