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SIHB16N50C-E3

SIHB16N50C-E3

For Reference Only

Part Number SIHB16N50C-E3
PNEDA Part # SIHB16N50C-E3
Description MOSFET N-CH 500V 16A D2PAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHB16N50C-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHB16N50C-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHB16N50C-E3, SIHB16N50C-E3 Datasheet (Total Pages: 9, Size: 294.59 KB)
PDFSIHF16N50C-E3 Datasheet Cover
SIHF16N50C-E3 Datasheet Page 2 SIHF16N50C-E3 Datasheet Page 3 SIHF16N50C-E3 Datasheet Page 4 SIHF16N50C-E3 Datasheet Page 5 SIHF16N50C-E3 Datasheet Page 6 SIHF16N50C-E3 Datasheet Page 7 SIHF16N50C-E3 Datasheet Page 8 SIHF16N50C-E3 Datasheet Page 9

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SIHB16N50C-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 8A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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