SIHB16N50C-E3
For Reference Only
| Part Number | SIHB16N50C-E3 |
| PNEDA Part # | SIHB16N50C-E3 |
| Description | MOSFET N-CH 500V 16A D2PAK |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 20,208 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIHB16N50C-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SIHB16N50C-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIHB16N50C-E3 Datasheet
- where to find SIHB16N50C-E3
- Vishay Siliconix
- Vishay Siliconix SIHB16N50C-E3
- SIHB16N50C-E3 PDF Datasheet
- SIHB16N50C-E3 Stock
- SIHB16N50C-E3 Pinout
- Datasheet SIHB16N50C-E3
- SIHB16N50C-E3 Supplier
- Vishay Siliconix Distributor
- SIHB16N50C-E3 Price
- SIHB16N50C-E3 Distributor
SIHB16N50C-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 9.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 50V FET Feature - Power Dissipation (Max) 2.1W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8-FL Package / Case 8-PowerTDFN |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 110A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7580pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK (7-Lead) Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXFA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 75mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 35.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 17.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 50V FET Feature - Power Dissipation (Max) 3.7W (Ta), 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
