SIS606BDN-T1-GE3
For Reference Only
| Part Number | SIS606BDN-T1-GE3 |
| PNEDA Part # | SIS606BDN-T1-GE3 |
| Description | MOSFET N-CHAN 100V POWERPAK 1212 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 44,664 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIS606BDN-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SIS606BDN-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIS606BDN-T1-GE3 Datasheet
- where to find SIS606BDN-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SIS606BDN-T1-GE3
- SIS606BDN-T1-GE3 PDF Datasheet
- SIS606BDN-T1-GE3 Stock
- SIS606BDN-T1-GE3 Pinout
- Datasheet SIS606BDN-T1-GE3
- SIS606BDN-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SIS606BDN-T1-GE3 Price
- SIS606BDN-T1-GE3 Distributor
SIS606BDN-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 35.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Rds On (Max) @ Id, Vgs | 17.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
The Products You May Be Interested In
|
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 240mOhm @ 8A, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 199nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5250pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 695W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 58A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1857pF @ 25V FET Feature - Power Dissipation (Max) 135W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5730pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V FET Feature - Power Dissipation (Max) 300mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
