Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

For Reference Only

Part Number SIS606BDN-T1-GE3
PNEDA Part # SIS606BDN-T1-GE3
Description MOSFET N-CHAN 100V POWERPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 44,664
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIS606BDN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIS606BDN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIS606BDN-T1-GE3, SIS606BDN-T1-GE3 Datasheet (Total Pages: 8, Size: 223.85 KB)
PDFSIS606BDN-T1-GE3 Datasheet Cover
SIS606BDN-T1-GE3 Datasheet Page 2 SIS606BDN-T1-GE3 Datasheet Page 3 SIS606BDN-T1-GE3 Datasheet Page 4 SIS606BDN-T1-GE3 Datasheet Page 5 SIS606BDN-T1-GE3 Datasheet Page 6 SIS606BDN-T1-GE3 Datasheet Page 7 SIS606BDN-T1-GE3 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIS606BDN-T1-GE3 Datasheet
  • where to find SIS606BDN-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIS606BDN-T1-GE3
  • SIS606BDN-T1-GE3 PDF Datasheet
  • SIS606BDN-T1-GE3 Stock

  • SIS606BDN-T1-GE3 Pinout
  • Datasheet SIS606BDN-T1-GE3
  • SIS606BDN-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIS606BDN-T1-GE3 Price
  • SIS606BDN-T1-GE3 Distributor

SIS606BDN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1470pF @ 50V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

The Products You May Be Interested In

FDB16AN08A0

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1857pF @ 25V

FET Feature

-

Power Dissipation (Max)

135W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

240mOhm @ 8A, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

199nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5250pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

695W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IRFH7004TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

194nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6419pF @ 25V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-VQFN Exposed Pad

DMTH4004SK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

68.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4305pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 180W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

MMBF170

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 10V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

SMD050-2

SMD050-2

Littelfuse

PTC RESET FUSE 60V 500MA 2SMD

MAX3645EEE+T

MAX3645EEE+T

Maxim Integrated

IC AMP LIMITING 16-QSOP

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

ATMEGA328P-AU

ATMEGA328P-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

SHT30-ARP-B

SHT30-ARP-B

Sensirion AG

SENSOR HUMID/TEMP 5V ANLG 3% SMD

749022015

749022015

Wurth Electronics

TRANSFORMER LAN 10/100/1000 SMD

SII1161CTU

SII1161CTU

Lattice Semiconductor Corporation

UXGA PANELLINK RECEIVER

HLMP-1503-C00A2

HLMP-1503-C00A2

Broadcom

LED 3MM GAP DIFF GRN RA HOUSING

HX5008NLT

HX5008NLT

Pulse Electronics Network

TRANSFORMER MODULE GIGABIT 1PORT

LT8620EMSE#PBF

LT8620EMSE#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJUSTABLE 2A 16MSOP

0458002.DR

0458002.DR

Littelfuse

FUSE BRD MNT 2A 48VAC 75VDC 1206

NTJD4001NT1G

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363