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SIHF12N65E-GE3

SIHF12N65E-GE3

For Reference Only

Part Number SIHF12N65E-GE3
PNEDA Part # SIHF12N65E-GE3
Description MOSFET N-CH 650V 12A TO-220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,108
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHF12N65E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHF12N65E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHF12N65E-GE3, SIHF12N65E-GE3 Datasheet (Total Pages: 7, Size: 144.16 KB)
PDFSIHF12N65E-GE3 Datasheet Cover
SIHF12N65E-GE3 Datasheet Page 2 SIHF12N65E-GE3 Datasheet Page 3 SIHF12N65E-GE3 Datasheet Page 4 SIHF12N65E-GE3 Datasheet Page 5 SIHF12N65E-GE3 Datasheet Page 6 SIHF12N65E-GE3 Datasheet Page 7

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SIHF12N65E-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1224pF @ 100V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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