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SIHG11N80E-GE3

SIHG11N80E-GE3

For Reference Only

Part Number SIHG11N80E-GE3
PNEDA Part # SIHG11N80E-GE3
Description MOSFET N-CH 800V 12A TO247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 11,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG11N80E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG11N80E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG11N80E-GE3, SIHG11N80E-GE3 Datasheet (Total Pages: 9, Size: 167.31 KB)
PDFSIHG11N80E-GE3 Datasheet Cover
SIHG11N80E-GE3 Datasheet Page 2 SIHG11N80E-GE3 Datasheet Page 3 SIHG11N80E-GE3 Datasheet Page 4 SIHG11N80E-GE3 Datasheet Page 5 SIHG11N80E-GE3 Datasheet Page 6 SIHG11N80E-GE3 Datasheet Page 7 SIHG11N80E-GE3 Datasheet Page 8 SIHG11N80E-GE3 Datasheet Page 9

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SIHG11N80E-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1670pF @ 100V
FET Feature-
Power Dissipation (Max)179W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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