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SIHH14N60E-T1-GE3

SIHH14N60E-T1-GE3

For Reference Only

Part Number SIHH14N60E-T1-GE3
PNEDA Part # SIHH14N60E-T1-GE3
Description MOSFET N-CH 600V 16A POWERPAK8X8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHH14N60E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHH14N60E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHH14N60E-T1-GE3, SIHH14N60E-T1-GE3 Datasheet (Total Pages: 9, Size: 192.08 KB)
PDFSIHH14N60E-T1-GE3 Datasheet Cover
SIHH14N60E-T1-GE3 Datasheet Page 2 SIHH14N60E-T1-GE3 Datasheet Page 3 SIHH14N60E-T1-GE3 Datasheet Page 4 SIHH14N60E-T1-GE3 Datasheet Page 5 SIHH14N60E-T1-GE3 Datasheet Page 6 SIHH14N60E-T1-GE3 Datasheet Page 7 SIHH14N60E-T1-GE3 Datasheet Page 8 SIHH14N60E-T1-GE3 Datasheet Page 9

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SIHH14N60E-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs255mOhm @ 7A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1416pF @ 100V
FET Feature-
Power Dissipation (Max)147W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

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