Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHP38N60EF-GE3

SIHP38N60EF-GE3

For Reference Only

Part Number SIHP38N60EF-GE3
PNEDA Part # SIHP38N60EF-GE3
Description MOSFET N-CH 600V TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,960
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHP38N60EF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHP38N60EF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHP38N60EF-GE3, SIHP38N60EF-GE3 Datasheet (Total Pages: 9, Size: 262.81 KB)
PDFSIHP38N60EF-GE3 Datasheet Cover
SIHP38N60EF-GE3 Datasheet Page 2 SIHP38N60EF-GE3 Datasheet Page 3 SIHP38N60EF-GE3 Datasheet Page 4 SIHP38N60EF-GE3 Datasheet Page 5 SIHP38N60EF-GE3 Datasheet Page 6 SIHP38N60EF-GE3 Datasheet Page 7 SIHP38N60EF-GE3 Datasheet Page 8 SIHP38N60EF-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHP38N60EF-GE3 Datasheet
  • where to find SIHP38N60EF-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIHP38N60EF-GE3
  • SIHP38N60EF-GE3 PDF Datasheet
  • SIHP38N60EF-GE3 Stock

  • SIHP38N60EF-GE3 Pinout
  • Datasheet SIHP38N60EF-GE3
  • SIHP38N60EF-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIHP38N60EF-GE3 Price
  • SIHP38N60EF-GE3 Distributor

SIHP38N60EF-GE3 Specifications

ManufacturerVishay Siliconix
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

PH2925U,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

3mOhm @ 25A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

6150pF @ 10V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

DMTH10H030LK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1871pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-4L

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

IXTM10P60

IXYS

Manufacturer

IXYS

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRFB3806PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 50V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFB42N20DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3430pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 330W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

BCM59111KMLG

BCM59111KMLG

Broadcom

QUAD IEEE802.3AT PSE CONTROLLER

LTC4303IMS8#TRPBF

LTC4303IMS8#TRPBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

MMBT3904-7-F

MMBT3904-7-F

Diodes Incorporated

TRANS NPN 40V 0.2A SMD SOT23-3

JS28F128J3D75A

JS28F128J3D75A

Micron Technology Inc.

IC FLASH 128M PARALLEL 56TSOP

PS2801C-4-A

PS2801C-4-A

CEL

OPTOISO 2.5KV 4CH TRANS 16SSOP

ADG1433YRUZ

ADG1433YRUZ

Analog Devices

IC SWITCH TRIPLE SPDT 16TSSOP

LNBH25LSPQR

LNBH25LSPQR

STMicroelectronics

IC REG CONV SAT TV 1OUT 24QFN

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

20IMX35D12D12-8G

20IMX35D12D12-8G

Bel Power Solutions

DC DC CONVERTER 12V 12V 12V 35W

74438356150

74438356150

Wurth Electronics

FIXED IND 15UH 1.9A 230MOHM SMD

BLM18PG121SN1D

BLM18PG121SN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

MF-USMF050-2

MF-USMF050-2

Bourns

PTC RESET FUSE 13.2V 500MA 1210