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SIJ462DP-T1-GE3

SIJ462DP-T1-GE3

For Reference Only

Part Number SIJ462DP-T1-GE3
PNEDA Part # SIJ462DP-T1-GE3
Description MOSFET N-CH 60V 46.5A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,264
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJ462DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJ462DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJ462DP-T1-GE3, SIJ462DP-T1-GE3 Datasheet (Total Pages: 10, Size: 215.01 KB)
PDFSIJ462DP-T1-GE3 Datasheet Cover
SIJ462DP-T1-GE3 Datasheet Page 2 SIJ462DP-T1-GE3 Datasheet Page 3 SIJ462DP-T1-GE3 Datasheet Page 4 SIJ462DP-T1-GE3 Datasheet Page 5 SIJ462DP-T1-GE3 Datasheet Page 6 SIJ462DP-T1-GE3 Datasheet Page 7 SIJ462DP-T1-GE3 Datasheet Page 8 SIJ462DP-T1-GE3 Datasheet Page 9 SIJ462DP-T1-GE3 Datasheet Page 10

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SIJ462DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C46.5A(Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 30V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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