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SIJ494DP-T1-GE3

SIJ494DP-T1-GE3

For Reference Only

Part Number SIJ494DP-T1-GE3
PNEDA Part # SIJ494DP-T1-GE3
Description MOSFET N-CH 150V 36.8A SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,818
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJ494DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJ494DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJ494DP-T1-GE3, SIJ494DP-T1-GE3 Datasheet (Total Pages: 8, Size: 207.53 KB)
PDFSIJ494DP-T1-GE3 Datasheet Cover
SIJ494DP-T1-GE3 Datasheet Page 2 SIJ494DP-T1-GE3 Datasheet Page 3 SIJ494DP-T1-GE3 Datasheet Page 4 SIJ494DP-T1-GE3 Datasheet Page 5 SIJ494DP-T1-GE3 Datasheet Page 6 SIJ494DP-T1-GE3 Datasheet Page 7 SIJ494DP-T1-GE3 Datasheet Page 8

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SIJ494DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1070pF @ 75V
FET Feature-
Power Dissipation (Max)69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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