Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIR164ADP-T1-GE3

SIR164ADP-T1-GE3

For Reference Only

Part Number SIR164ADP-T1-GE3
PNEDA Part # SIR164ADP-T1-GE3
Description MOSFET N-CH 30V POWERPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,976
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR164ADP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR164ADP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR164ADP-T1-GE3, SIR164ADP-T1-GE3 Datasheet (Total Pages: 9, Size: 207.94 KB)
PDFSIR164ADP-T1-GE3 Datasheet Cover
SIR164ADP-T1-GE3 Datasheet Page 2 SIR164ADP-T1-GE3 Datasheet Page 3 SIR164ADP-T1-GE3 Datasheet Page 4 SIR164ADP-T1-GE3 Datasheet Page 5 SIR164ADP-T1-GE3 Datasheet Page 6 SIR164ADP-T1-GE3 Datasheet Page 7 SIR164ADP-T1-GE3 Datasheet Page 8 SIR164ADP-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIR164ADP-T1-GE3 Datasheet
  • where to find SIR164ADP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIR164ADP-T1-GE3
  • SIR164ADP-T1-GE3 PDF Datasheet
  • SIR164ADP-T1-GE3 Stock

  • SIR164ADP-T1-GE3 Pinout
  • Datasheet SIR164ADP-T1-GE3
  • SIR164ADP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIR164ADP-T1-GE3 Price
  • SIR164ADP-T1-GE3 Distributor

SIR164ADP-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

IPD25CNE8N G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

85V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 39µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2070pF @ 40V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

JANSR2N7261U

Microsemi

Manufacturer

Microsemi Corporation

Series

Military, MIL-PRF-19500/601

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Rds On (Max) @ Id, Vgs

185mOhm @ 8A, 12V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 12V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C

Mounting Type

Surface Mount

Supplier Device Package

18-ULCC (9.14x7.49)

Package / Case

18-CLCC

STP9NK50Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

7.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

910pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TSM60N750CH C5G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

554pF @ 100V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-251 (IPAK)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI7848BDP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 20V

FET Feature

-

Power Dissipation (Max)

4.2W (Ta), 36W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

MC14094BDR2G

MC14094BDR2G

ON Semiconductor

IC SHIFT REGSTR 8BIT CMOS 16SOIC

AD823AR

AD823AR

Analog Devices

IC OPAMP JFET 2 CIRCUIT 8SOIC

DLP11SN900HL2L

DLP11SN900HL2L

Murata

CMC 150MA 2LN 90 OHM SMD

SI8540-B-FWR

SI8540-B-FWR

Silicon Labs

IC CURR SENSE 1 CIRCUIT SOT23-5

TDA04H0SB1

TDA04H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

250R05L0R4AV4T

250R05L0R4AV4T

Johanson Technology

CAP CER 0.4PF 25V C0G/NP0 0201

MT29F2G16ABBEAHC-AIT:E TR

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

SMBJ5.0A-13-F

SMBJ5.0A-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMB

MAX17043G+T

MAX17043G+T

Maxim Integrated

IC 2-WIRE FG MODEL GAUGE LO BATT

MIC47100YMME

MIC47100YMME

Microchip Technology

IC REG LINEAR POS ADJ 1A 8MSOP

SD4933MR

SD4933MR

STMicroelectronics

TRANSISTOR RF MOSFET N-CH M177

A3P250-VQG100I

A3P250-VQG100I

Microsemi

IC FPGA 68 I/O 100VQFP