SIRA10BDP-T1-GE3
For Reference Only
Part Number | SIRA10BDP-T1-GE3 |
PNEDA Part # | SIRA10BDP-T1-GE3 |
Description | MOSFET N-CHAN 30V |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 4,248 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIRA10BDP-T1-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SIRA10BDP-T1-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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SIRA10BDP-T1-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3.6mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 36.2nC @ 10V |
Vgs (Max) | +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds | 1710pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 5W (Ta), 43W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |
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