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SIRA84DP-T1-GE3

SIRA84DP-T1-GE3

For Reference Only

Part Number SIRA84DP-T1-GE3
PNEDA Part # SIRA84DP-T1-GE3
Description MOSFET N-CH 30V 60A POWERPAKSO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,452
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA84DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA84DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIRA84DP-T1-GE3, SIRA84DP-T1-GE3 Datasheet (Total Pages: 13, Size: 405.82 KB)
PDFSIRA84DP-T1-GE3 Datasheet Cover
SIRA84DP-T1-GE3 Datasheet Page 2 SIRA84DP-T1-GE3 Datasheet Page 3 SIRA84DP-T1-GE3 Datasheet Page 4 SIRA84DP-T1-GE3 Datasheet Page 5 SIRA84DP-T1-GE3 Datasheet Page 6 SIRA84DP-T1-GE3 Datasheet Page 7 SIRA84DP-T1-GE3 Datasheet Page 8 SIRA84DP-T1-GE3 Datasheet Page 9 SIRA84DP-T1-GE3 Datasheet Page 10 SIRA84DP-T1-GE3 Datasheet Page 11

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SIRA84DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1535pF @ 15V
FET Feature-
Power Dissipation (Max)34.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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