SIS698DN-T1-GE3
For Reference Only
| Part Number | SIS698DN-T1-GE3 |
| PNEDA Part # | SIS698DN-T1-GE3 |
| Description | MOSFET N-CH 100V 6.9A 1212-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,562 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SIS698DN-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SIS698DN-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SIS698DN-T1-GE3 Datasheet
- where to find SIS698DN-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SIS698DN-T1-GE3
- SIS698DN-T1-GE3 PDF Datasheet
- SIS698DN-T1-GE3 Stock
- SIS698DN-T1-GE3 Pinout
- Datasheet SIS698DN-T1-GE3
- SIS698DN-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SIS698DN-T1-GE3 Price
- SIS698DN-T1-GE3 Distributor
SIS698DN-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 19.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 37mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 299mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1645pF @ 100V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 78A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 5330pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V Vgs(th) (Max) @ Id 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 110V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
