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SISA72ADN-T1-GE3

SISA72ADN-T1-GE3

For Reference Only

Part Number SISA72ADN-T1-GE3
PNEDA Part # SISA72ADN-T1-GE3
Description MOSFET N-CHAN 40-V POWERPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,078
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISA72ADN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISA72ADN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISA72ADN-T1-GE3, SISA72ADN-T1-GE3 Datasheet (Total Pages: 9, Size: 263.9 KB)
PDFSISA72ADN-T1-GE3 Datasheet Cover
SISA72ADN-T1-GE3 Datasheet Page 2 SISA72ADN-T1-GE3 Datasheet Page 3 SISA72ADN-T1-GE3 Datasheet Page 4 SISA72ADN-T1-GE3 Datasheet Page 5 SISA72ADN-T1-GE3 Datasheet Page 6 SISA72ADN-T1-GE3 Datasheet Page 7 SISA72ADN-T1-GE3 Datasheet Page 8 SISA72ADN-T1-GE3 Datasheet Page 9

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SISA72ADN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C25.4A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds2530pF @ 20V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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