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SISH407DN-T1-GE3

SISH407DN-T1-GE3

For Reference Only

Part Number SISH407DN-T1-GE3
PNEDA Part # SISH407DN-T1-GE3
Description MOSFET P-CH 20V POWERPAK 1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISH407DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISH407DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISH407DN-T1-GE3, SISH407DN-T1-GE3 Datasheet (Total Pages: 9, Size: 180.59 KB)
PDFSISH407DN-T1-GE3 Datasheet Cover
SISH407DN-T1-GE3 Datasheet Page 2 SISH407DN-T1-GE3 Datasheet Page 3 SISH407DN-T1-GE3 Datasheet Page 4 SISH407DN-T1-GE3 Datasheet Page 5 SISH407DN-T1-GE3 Datasheet Page 6 SISH407DN-T1-GE3 Datasheet Page 7 SISH407DN-T1-GE3 Datasheet Page 8 SISH407DN-T1-GE3 Datasheet Page 9

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SISH407DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C15.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs9.5mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs93.8nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2760pF @ 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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