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SISS67DN-T1-GE3

SISS67DN-T1-GE3

For Reference Only

Part Number SISS67DN-T1-GE3
PNEDA Part # SISS67DN-T1-GE3
Description MOSFET P-CHAN 30V POWERPAK 1212-
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SISS67DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSISS67DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SISS67DN-T1-GE3, SISS67DN-T1-GE3 Datasheet (Total Pages: 9, Size: 248.43 KB)
PDFSISS67DN-T1-GE3 Datasheet Cover
SISS67DN-T1-GE3 Datasheet Page 2 SISS67DN-T1-GE3 Datasheet Page 3 SISS67DN-T1-GE3 Datasheet Page 4 SISS67DN-T1-GE3 Datasheet Page 5 SISS67DN-T1-GE3 Datasheet Page 6 SISS67DN-T1-GE3 Datasheet Page 7 SISS67DN-T1-GE3 Datasheet Page 8 SISS67DN-T1-GE3 Datasheet Page 9

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SISS67DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs111nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds4380pF @ 15V
FET Feature-
Power Dissipation (Max)65.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8S (3.3x3.3)
Package / CasePowerPAK® 1212-8S

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