SPA08N50C3XKSA1
For Reference Only
| Part Number | SPA08N50C3XKSA1 |
| PNEDA Part # | SPA08N50C3XKSA1 |
| Description | MOSFET N-CH 560V 7.6A TO220FP |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,118 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPA08N50C3XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPA08N50C3XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SPA08N50C3XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Full-Pak Package / Case TO-220-3 Full Pack |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
