SPA20N60C3XKSA1
For Reference Only
| Part Number | SPA20N60C3XKSA1 |
| PNEDA Part # | SPA20N60C3XKSA1 |
| Description | MOSFET N-CH 600V 20.7A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 17,898 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPA20N60C3XKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPA20N60C3XKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPA20N60C3XKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 34.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-31 Full Pack |
| Package / Case | TO-220-3 Full Pack |
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 128mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 386pF @ 10V FET Feature - Power Dissipation (Max) 463mW (Ta), 1.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1170pF @ 25V FET Feature - Power Dissipation (Max) 178W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251A Package / Case TO-251-3 Stub Leads, IPak |
