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SPB35N10 G

SPB35N10 G

For Reference Only

Part Number SPB35N10 G
PNEDA Part # SPB35N10-G
Description MOSFET N-CH 100V 35A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,966
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPB35N10 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPB35N10 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPB35N10 G, SPB35N10 G Datasheet (Total Pages: 8, Size: 486.6 KB)
PDFSPB35N10 G Datasheet Cover
SPB35N10 G Datasheet Page 2 SPB35N10 G Datasheet Page 3 SPB35N10 G Datasheet Page 4 SPB35N10 G Datasheet Page 5 SPB35N10 G Datasheet Page 6 SPB35N10 G Datasheet Page 7 SPB35N10 G Datasheet Page 8

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SPB35N10 G Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs44mOhm @ 26.4A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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