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SPD08N50C3BTMA1

SPD08N50C3BTMA1

For Reference Only

Part Number SPD08N50C3BTMA1
PNEDA Part # SPD08N50C3BTMA1
Description MOSFET N-CH 560V 7.6A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,136
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPD08N50C3BTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPD08N50C3BTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPD08N50C3BTMA1, SPD08N50C3BTMA1 Datasheet (Total Pages: 11, Size: 256.76 KB)
PDFSPD08N50C3BTMA1 Datasheet Cover
SPD08N50C3BTMA1 Datasheet Page 2 SPD08N50C3BTMA1 Datasheet Page 3 SPD08N50C3BTMA1 Datasheet Page 4 SPD08N50C3BTMA1 Datasheet Page 5 SPD08N50C3BTMA1 Datasheet Page 6 SPD08N50C3BTMA1 Datasheet Page 7 SPD08N50C3BTMA1 Datasheet Page 8 SPD08N50C3BTMA1 Datasheet Page 9 SPD08N50C3BTMA1 Datasheet Page 10 SPD08N50C3BTMA1 Datasheet Page 11

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SPD08N50C3BTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750pF @ 25V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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