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SPI10N10L

SPI10N10L

For Reference Only

Part Number SPI10N10L
PNEDA Part # SPI10N10L
Description MOSFET N-CH 100V 10.3A I2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,588
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI10N10L Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI10N10L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI10N10L, SPI10N10L Datasheet (Total Pages: 8, Size: 214.21 KB)
PDFSPP10N10L Datasheet Cover
SPP10N10L Datasheet Page 2 SPP10N10L Datasheet Page 3 SPP10N10L Datasheet Page 4 SPP10N10L Datasheet Page 5 SPP10N10L Datasheet Page 6 SPP10N10L Datasheet Page 7 SPP10N10L Datasheet Page 8

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SPI10N10L Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds444pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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