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SPI11N60C3HKSA1

SPI11N60C3HKSA1

For Reference Only

Part Number SPI11N60C3HKSA1
PNEDA Part # SPI11N60C3HKSA1
Description MOSFET N-CH 600V 11A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI11N60C3HKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI11N60C3HKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI11N60C3HKSA1, SPI11N60C3HKSA1 Datasheet (Total Pages: 16, Size: 654.01 KB)
PDFSPI11N60C3HKSA1 Datasheet Cover
SPI11N60C3HKSA1 Datasheet Page 2 SPI11N60C3HKSA1 Datasheet Page 3 SPI11N60C3HKSA1 Datasheet Page 4 SPI11N60C3HKSA1 Datasheet Page 5 SPI11N60C3HKSA1 Datasheet Page 6 SPI11N60C3HKSA1 Datasheet Page 7 SPI11N60C3HKSA1 Datasheet Page 8 SPI11N60C3HKSA1 Datasheet Page 9 SPI11N60C3HKSA1 Datasheet Page 10 SPI11N60C3HKSA1 Datasheet Page 11

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SPI11N60C3HKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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