Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SPI11N60S5BKSA1

SPI11N60S5BKSA1

For Reference Only

Part Number SPI11N60S5BKSA1
PNEDA Part # SPI11N60S5BKSA1
Description MOSFET N-CH 600V 11A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,786
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI11N60S5BKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI11N60S5BKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SPI11N60S5BKSA1 Datasheet
  • where to find SPI11N60S5BKSA1
  • Infineon Technologies

  • Infineon Technologies SPI11N60S5BKSA1
  • SPI11N60S5BKSA1 PDF Datasheet
  • SPI11N60S5BKSA1 Stock

  • SPI11N60S5BKSA1 Pinout
  • Datasheet SPI11N60S5BKSA1
  • SPI11N60S5BKSA1 Supplier

  • Infineon Technologies Distributor
  • SPI11N60S5BKSA1 Price
  • SPI11N60S5BKSA1 Distributor

SPI11N60S5BKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id5.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1460pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

240A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 120A, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

345nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23800pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264

Package / Case

TO-264-3, TO-264AA

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

2000V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

143nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3700pF @ 25V

FET Feature

-

Power Dissipation (Max)

960W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247PLUS-HV

Package / Case

TO-247-3 Variant

CSD23381F4

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

175mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.14nC @ 4.5V

Vgs (Max)

-8V

Input Capacitance (Ciss) (Max) @ Vds

236pF @ 6V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-PICOSTAR

Package / Case

3-XFDFN

AON2409

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

32mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN-EP (2x2)

Package / Case

6-UDFN Exposed Pad

SSM6J801R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

32.5mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.8nC @ 4.5V

Vgs (Max)

+6V, -8V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP-F

Package / Case

6-SMD, Flat Leads

Recently Sold

AT24C16C-SSHM-T

AT24C16C-SSHM-T

Microchip Technology

IC EEPROM 16K I2C 1MHZ 8SOIC

L78L05ABZ

L78L05ABZ

STMicroelectronics

IC REG LINEAR 5V 100MA TO92-3

PAC1934T-I/JQ

PAC1934T-I/JQ

Microchip Technology

QUAD HIGH-SIDE CURRENT SENSOR

MT41J128M16JT-093:K

MT41J128M16JT-093:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 96FBGA

HMC7044LP10BE

HMC7044LP10BE

Analog Devices

IC JITTER ATTENUATOR 68LFCSP

ADE7754ARZRL

ADE7754ARZRL

Analog Devices

IC ENERGY METERING 3PHASE 24SOIC

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM

CY37064P44-125JXC

CY37064P44-125JXC

Cypress Semiconductor

IC CPLD 64MC 10NS 44PLCC

FA-20H 12.0000MD30Z-K3

FA-20H 12.0000MD30Z-K3

EPSON

CRYSTAL 12.00 MHZ 10.0PF SMD

H5007

H5007

Pulse Electronics Network

MODULE SINGLE GIGABIT LAN 24SOIC

MT29F2G16ABBEAHC-AIT:E

MT29F2G16ABBEAHC-AIT:E

Micron Technology Inc.

IC FLASH 2G PARALLEL FBGA

AD9515BCPZ

AD9515BCPZ

Analog Devices

IC CLK BUFFER 1:2 1.6GHZ 32LFCSP