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SPI47N10

SPI47N10

For Reference Only

Part Number SPI47N10
PNEDA Part # SPI47N10
Description MOSFET N-CH 100V 47A I2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,682
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPI47N10 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPI47N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPI47N10, SPI47N10 Datasheet (Total Pages: 8, Size: 106.78 KB)
PDFSPP47N10 Datasheet Cover
SPP47N10 Datasheet Page 2 SPP47N10 Datasheet Page 3 SPP47N10 Datasheet Page 4 SPP47N10 Datasheet Page 5 SPP47N10 Datasheet Page 6 SPP47N10 Datasheet Page 7 SPP47N10 Datasheet Page 8

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SPI47N10 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs33mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)175W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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