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SQJ401EP-T1_GE3

SQJ401EP-T1_GE3

For Reference Only

Part Number SQJ401EP-T1_GE3
PNEDA Part # SQJ401EP-T1_GE3
Description MOSFET P-CH 12V 32A POWERPAKSO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ401EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ401EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJ401EP-T1_GE3, SQJ401EP-T1_GE3 Datasheet (Total Pages: 10, Size: 708.39 KB)
PDFSQJ401EP-T1_GE3 Datasheet Cover
SQJ401EP-T1_GE3 Datasheet Page 2 SQJ401EP-T1_GE3 Datasheet Page 3 SQJ401EP-T1_GE3 Datasheet Page 4 SQJ401EP-T1_GE3 Datasheet Page 5 SQJ401EP-T1_GE3 Datasheet Page 6 SQJ401EP-T1_GE3 Datasheet Page 7 SQJ401EP-T1_GE3 Datasheet Page 8 SQJ401EP-T1_GE3 Datasheet Page 9 SQJ401EP-T1_GE3 Datasheet Page 10

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SQJ401EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs164nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds10015pF @ 6V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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