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FCP125N65S3R0

FCP125N65S3R0

For Reference Only

Part Number FCP125N65S3R0
PNEDA Part # FCP125N65S3R0
Description SUPERFET3 650V TO220 PKG
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 19,008
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCP125N65S3R0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCP125N65S3R0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCP125N65S3R0, FCP125N65S3R0 Datasheet (Total Pages: 10, Size: 385.25 KB)
PDFFCP125N65S3R0 Datasheet Cover
FCP125N65S3R0 Datasheet Page 2 FCP125N65S3R0 Datasheet Page 3 FCP125N65S3R0 Datasheet Page 4 FCP125N65S3R0 Datasheet Page 5 FCP125N65S3R0 Datasheet Page 6 FCP125N65S3R0 Datasheet Page 7 FCP125N65S3R0 Datasheet Page 8 FCP125N65S3R0 Datasheet Page 9 FCP125N65S3R0 Datasheet Page 10

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FCP125N65S3R0 Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1940pF @ 400V
FET Feature-
Power Dissipation (Max)181W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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