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SQJ992EP-T1_GE3

SQJ992EP-T1_GE3

For Reference Only

Part Number SQJ992EP-T1_GE3
PNEDA Part # SQJ992EP-T1_GE3
Description MOSFET 2N-CH 60V 15A POWERPAKSO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,924
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ992EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ992EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ992EP-T1_GE3, SQJ992EP-T1_GE3 Datasheet (Total Pages: 11, Size: 190.53 KB)
PDFSQJ992EP-T1_GE3 Datasheet Cover
SQJ992EP-T1_GE3 Datasheet Page 2 SQJ992EP-T1_GE3 Datasheet Page 3 SQJ992EP-T1_GE3 Datasheet Page 4 SQJ992EP-T1_GE3 Datasheet Page 5 SQJ992EP-T1_GE3 Datasheet Page 6 SQJ992EP-T1_GE3 Datasheet Page 7 SQJ992EP-T1_GE3 Datasheet Page 8 SQJ992EP-T1_GE3 Datasheet Page 9 SQJ992EP-T1_GE3 Datasheet Page 10 SQJ992EP-T1_GE3 Datasheet Page 11

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SQJ992EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C15A
Rds On (Max) @ Id, Vgs56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds446pF @ 30V
Power - Max34W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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