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SQJB40EP-T1_GE3

SQJB40EP-T1_GE3

For Reference Only

Part Number SQJB40EP-T1_GE3
PNEDA Part # SQJB40EP-T1_GE3
Description MOSFET 2 N-CH 40V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,230
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJB40EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJB40EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJB40EP-T1_GE3, SQJB40EP-T1_GE3 Datasheet (Total Pages: 10, Size: 252.85 KB)
PDFSQJB40EP-T1_GE3 Datasheet Cover
SQJB40EP-T1_GE3 Datasheet Page 2 SQJB40EP-T1_GE3 Datasheet Page 3 SQJB40EP-T1_GE3 Datasheet Page 4 SQJB40EP-T1_GE3 Datasheet Page 5 SQJB40EP-T1_GE3 Datasheet Page 6 SQJB40EP-T1_GE3 Datasheet Page 7 SQJB40EP-T1_GE3 Datasheet Page 8 SQJB40EP-T1_GE3 Datasheet Page 9 SQJB40EP-T1_GE3 Datasheet Page 10

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SQJB40EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
Power - Max34W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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