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SQM120N02-1M3L_GE3

SQM120N02-1M3L_GE3

For Reference Only

Part Number SQM120N02-1M3L_GE3
PNEDA Part # SQM120N02-1M3L_GE3
Description MOSFET N-CH 20V 120A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 13 - Jul 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQM120N02-1M3L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQM120N02-1M3L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQM120N02-1M3L_GE3, SQM120N02-1M3L_GE3 Datasheet (Total Pages: 9, Size: 166.75 KB)
PDFSQM120N02-1M3L_GE3 Datasheet Cover
SQM120N02-1M3L_GE3 Datasheet Page 2 SQM120N02-1M3L_GE3 Datasheet Page 3 SQM120N02-1M3L_GE3 Datasheet Page 4 SQM120N02-1M3L_GE3 Datasheet Page 5 SQM120N02-1M3L_GE3 Datasheet Page 6 SQM120N02-1M3L_GE3 Datasheet Page 7 SQM120N02-1M3L_GE3 Datasheet Page 8 SQM120N02-1M3L_GE3 Datasheet Page 9

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SQM120N02-1M3L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs290nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14500pF @ 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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