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SQM200N04-1M7L_GE3

SQM200N04-1M7L_GE3

For Reference Only

Part Number SQM200N04-1M7L_GE3
PNEDA Part # SQM200N04-1M7L_GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 40V 200A TO-263
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 14,556
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jul 29 - Aug 3 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SQM200N04-1M7L_GE3 Resources

Brand Vishay Siliconix
Mfr. Part NumberSQM200N04-1M7L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQM200N04-1M7L_GE3, SQM200N04-1M7L_GE3 Datasheet (Total Pages: 9, Size: 172.92 KB)
PDFSQM200N04-1M7L_GE3 Datasheet Cover
SQM200N04-1M7L_GE3 Datasheet Page 2 SQM200N04-1M7L_GE3 Datasheet Page 3 SQM200N04-1M7L_GE3 Datasheet Page 4 SQM200N04-1M7L_GE3 Datasheet Page 5 SQM200N04-1M7L_GE3 Datasheet Page 6 SQM200N04-1M7L_GE3 Datasheet Page 7 SQM200N04-1M7L_GE3 Datasheet Page 8 SQM200N04-1M7L_GE3 Datasheet Page 9

SQM200N04-1M7L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs291nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11168pF @ 20V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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