Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSM3K15ACT(TPL3)

SSM3K15ACT(TPL3)

For Reference Only

Part Number SSM3K15ACT(TPL3)
PNEDA Part # SSM3K15ACT-TPL3
Description MOSFET N-CH 30V 0.1A CST3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,840
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM3K15ACT(TPL3) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM3K15ACT(TPL3)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSM3K15ACT(TPL3) Datasheet
  • where to find SSM3K15ACT(TPL3)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage SSM3K15ACT(TPL3)
  • SSM3K15ACT(TPL3) PDF Datasheet
  • SSM3K15ACT(TPL3) Stock

  • SSM3K15ACT(TPL3) Pinout
  • Datasheet SSM3K15ACT(TPL3)
  • SSM3K15ACT(TPL3) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • SSM3K15ACT(TPL3) Price
  • SSM3K15ACT(TPL3) Distributor

SSM3K15ACT(TPL3) Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Rds On (Max) @ Id, Vgs3.6Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13.5pF @ 3V
FET Feature-
Power Dissipation (Max)100mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageCST3
Package / CaseSC-101, SOT-883

The Products You May Be Interested In

IRF7815PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

43mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1647pF @ 75V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

FQPF9N08L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

210mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Power Dissipation (Max)

23W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

STB12NM50ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 50V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

GA50JT12-247

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

FET Type

-

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

25mOhm @ 50A

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

7209pF @ 800V

FET Feature

-

Power Dissipation (Max)

583W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AB

Package / Case

TO-247-3

STU4N52K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

525V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

334pF @ 100V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

CS5173EDR8G

CS5173EDR8G

ON Semiconductor

IC REG MULT CONFG ADJ 1.5A 8SOIC

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

PIC18F2525-I/SO

PIC18F2525-I/SO

Microchip Technology

IC MCU 8BIT 48KB FLASH 28SOIC

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

HSMG-C170

HSMG-C170

Broadcom

LED GREEN DIFFUSED CHIP SMD

LT3012EFE#PBF

LT3012EFE#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 250MA 16TSSOP

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

MC9S08LL8CLF

MC9S08LL8CLF

NXP

IC MCU 8BIT 10KB FLASH 48LQFP

MCP73832T-2ATI/OT

MCP73832T-2ATI/OT

Microchip Technology

IC LI-ION/LI-POLY CTRLR SOT23-5

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

MPQ7053

MPQ7053

Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A