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STU4N52K3

STU4N52K3

For Reference Only

Part Number STU4N52K3
PNEDA Part # STU4N52K3
Description MOSFET N-CH 525V 2.5A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 20,628
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STU4N52K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTU4N52K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STU4N52K3, STU4N52K3 Datasheet (Total Pages: 27, Size: 585.86 KB)
PDFSTD4N52K3 Datasheet Cover
STD4N52K3 Datasheet Page 2 STD4N52K3 Datasheet Page 3 STD4N52K3 Datasheet Page 4 STD4N52K3 Datasheet Page 5 STD4N52K3 Datasheet Page 6 STD4N52K3 Datasheet Page 7 STD4N52K3 Datasheet Page 8 STD4N52K3 Datasheet Page 9 STD4N52K3 Datasheet Page 10 STD4N52K3 Datasheet Page 11

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STU4N52K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)525V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds334pF @ 100V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Drive Voltage (Max Rds On, Min Rds On)

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