SSM3K16CT,L3F
For Reference Only
Part Number | SSM3K16CT,L3F |
PNEDA Part # | SSM3K16CT-L3F |
Description | X34 PB-F CST3 FET (LF) TRANSISTO |
Manufacturer | Toshiba Semiconductor and Storage |
Unit Price | Request a Quote |
In Stock | 2,322 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
SSM3K16CT Resources
Brand | Toshiba Semiconductor and Storage |
ECAD Module | |
Mfr. Part Number | SSM3K16CT,L3F |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SSM3K16CT,L3F Datasheet
- where to find SSM3K16CT,L3F
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage SSM3K16CT,L3F
- SSM3K16CT,L3F PDF Datasheet
- SSM3K16CT,L3F Stock
- SSM3K16CT,L3F Pinout
- Datasheet SSM3K16CT,L3F
- SSM3K16CT,L3F Supplier
- Toshiba Semiconductor and Storage Distributor
- SSM3K16CT,L3F Price
- SSM3K16CT,L3F Distributor
SSM3K16CT Specifications
Manufacturer | Toshiba Semiconductor and Storage |
Series | π-MOSIV |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 9.3pF @ 3V |
FET Feature | - |
Power Dissipation (Max) | 100mW (Ta) |
Operating Temperature | 150°C |
Mounting Type | Surface Mount |
Supplier Device Package | CST3 |
Package / Case | SC-101, SOT-883 |
The Products You May Be Interested In
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.05Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V FET Feature - Power Dissipation (Max) 300mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 155A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 150A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 75V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1 Package / Case 8-PowerSFN |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 270mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2942pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |