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STB10LN80K5

STB10LN80K5

For Reference Only

Part Number STB10LN80K5
PNEDA Part # STB10LN80K5
Description MOSFET N-CHANNEL 800V 8A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 13,890
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB10LN80K5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB10LN80K5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB10LN80K5, STB10LN80K5 Datasheet (Total Pages: 15, Size: 424.07 KB)
PDFSTB10LN80K5 Datasheet Cover
STB10LN80K5 Datasheet Page 2 STB10LN80K5 Datasheet Page 3 STB10LN80K5 Datasheet Page 4 STB10LN80K5 Datasheet Page 5 STB10LN80K5 Datasheet Page 6 STB10LN80K5 Datasheet Page 7 STB10LN80K5 Datasheet Page 8 STB10LN80K5 Datasheet Page 9 STB10LN80K5 Datasheet Page 10 STB10LN80K5 Datasheet Page 11

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STB10LN80K5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ K5
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs630mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds427pF @ 100V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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