Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB50CN10NGATMA1

IPB50CN10NGATMA1

For Reference Only

Part Number IPB50CN10NGATMA1
PNEDA Part # IPB50CN10NGATMA1
Description MOSFET N-CH 100V 20A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB50CN10NGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB50CN10NGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB50CN10NGATMA1, IPB50CN10NGATMA1 Datasheet (Total Pages: 12, Size: 902.19 KB)
PDFIPI50CN10NGHKSA1 Datasheet Cover
IPI50CN10NGHKSA1 Datasheet Page 2 IPI50CN10NGHKSA1 Datasheet Page 3 IPI50CN10NGHKSA1 Datasheet Page 4 IPI50CN10NGHKSA1 Datasheet Page 5 IPI50CN10NGHKSA1 Datasheet Page 6 IPI50CN10NGHKSA1 Datasheet Page 7 IPI50CN10NGHKSA1 Datasheet Page 8 IPI50CN10NGHKSA1 Datasheet Page 9 IPI50CN10NGHKSA1 Datasheet Page 10 IPI50CN10NGHKSA1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB50CN10NGATMA1 Datasheet
  • where to find IPB50CN10NGATMA1
  • Infineon Technologies

  • Infineon Technologies IPB50CN10NGATMA1
  • IPB50CN10NGATMA1 PDF Datasheet
  • IPB50CN10NGATMA1 Stock

  • IPB50CN10NGATMA1 Pinout
  • Datasheet IPB50CN10NGATMA1
  • IPB50CN10NGATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB50CN10NGATMA1 Price
  • IPB50CN10NGATMA1 Distributor

IPB50CN10NGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1090pF @ 50V
FET Feature-
Power Dissipation (Max)44W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRFB7545PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

95A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 57A, 10V

Vgs(th) (Max) @ Id

3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4010pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

VP2450N3-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

100mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

190pF @ 25V

FET Feature

-

Power Dissipation (Max)

740mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

18mOhm @ 7.9A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

886pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN2020MD (2x2)

Package / Case

6-UDFN Exposed Pad

IRF540ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

92W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPI50CN10NGHKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1090pF @ 50V

FET Feature

-

Power Dissipation (Max)

44W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

FDS4935BZ

FDS4935BZ

ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC

M25P10-AVMN6P

M25P10-AVMN6P

Micron Technology Inc.

IC FLASH 1M SPI 50MHZ 8SO

LPC8N04FHI24Z

LPC8N04FHI24Z

NXP

IC MCU 32BIT 32KB FLASH 24HVQFN

IHLP2525CZER3R3M01

IHLP2525CZER3R3M01

Vishay Dale

FIXED IND 3.3UH 6A 30 MOHM SMD

744043101

744043101

Wurth Electronics

FIXED IND 100UH 510MA 600 MOHM

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

CYUSB3304-68LTXI

CYUSB3304-68LTXI

Cypress Semiconductor

IC USB 3.0 HUB 4-PORT 68QFN

ISL6269CRZ

ISL6269CRZ

Renesas Electronics America Inc.

IC REG CTRLR BUCK 16QFN

TNY278PN

TNY278PN

Power Integrations

IC OFFLINE SWIT OVP OTP HV 8DIP

LT3080EST#PBF

LT3080EST#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 1.1A SOT223-3

PIC18F25K22-I/SO

PIC18F25K22-I/SO

Microchip Technology

IC MCU 8BIT 32KB FLASH 28SOIC

ASDXRRX005KGAA5

ASDXRRX005KGAA5

Honeywell Sensing and Productivity Solutions

SENSOR PRESSURE DIFF