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STB4NK60Z-1

STB4NK60Z-1

For Reference Only

Part Number STB4NK60Z-1
PNEDA Part # STB4NK60Z-1
Description MOSFET N-CH 600V 4A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 17,940
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB4NK60Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB4NK60Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB4NK60Z-1, STB4NK60Z-1 Datasheet (Total Pages: 32, Size: 726.88 KB)
PDFSTD4NK60Z-1 Datasheet Cover
STD4NK60Z-1 Datasheet Page 2 STD4NK60Z-1 Datasheet Page 3 STD4NK60Z-1 Datasheet Page 4 STD4NK60Z-1 Datasheet Page 5 STD4NK60Z-1 Datasheet Page 6 STD4NK60Z-1 Datasheet Page 7 STD4NK60Z-1 Datasheet Page 8 STD4NK60Z-1 Datasheet Page 9 STD4NK60Z-1 Datasheet Page 10 STD4NK60Z-1 Datasheet Page 11

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STB4NK60Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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