Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD11NM50N

STD11NM50N

For Reference Only

Part Number STD11NM50N
PNEDA Part # STD11NM50N
Description MOSFET N-CH 500V 9A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD11NM50N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD11NM50N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD11NM50N, STD11NM50N Datasheet (Total Pages: 16, Size: 669.42 KB)
PDFSTD11NM50N Datasheet Cover
STD11NM50N Datasheet Page 2 STD11NM50N Datasheet Page 3 STD11NM50N Datasheet Page 4 STD11NM50N Datasheet Page 5 STD11NM50N Datasheet Page 6 STD11NM50N Datasheet Page 7 STD11NM50N Datasheet Page 8 STD11NM50N Datasheet Page 9 STD11NM50N Datasheet Page 10 STD11NM50N Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD11NM50N Datasheet
  • where to find STD11NM50N
  • STMicroelectronics

  • STMicroelectronics STD11NM50N
  • STD11NM50N PDF Datasheet
  • STD11NM50N Stock

  • STD11NM50N Pinout
  • Datasheet STD11NM50N
  • STD11NM50N Supplier

  • STMicroelectronics Distributor
  • STD11NM50N Price
  • STD11NM50N Distributor

STD11NM50N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs470mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds547pF @ 50V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

32mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

740nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

73000pF @ 25V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

TO-247-3

SI1032R-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

140mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A

BUK929R1-60EJ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IXFP10N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 5A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STB100NF04T4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

AD8113JSTZ

AD8113JSTZ

Analog Devices

IC VIDEO CROSSPOINT SWIT 100LQFP

LTC4365IDDB#TRMPBF

LTC4365IDDB#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROTECT 8-DFN

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

FT245RL-REEL

FT245RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB TO PARALLEL FIFO 28-SSOP

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

EVQ-P7C01P

EVQ-P7C01P

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.05A 12V

DS1338U-33+

DS1338U-33+

Maxim Integrated

IC RTC CLK/CALENDAR I2C 8-USOP

RB496EATR

RB496EATR

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 20V TSMD5

NJM7808FA

NJM7808FA

NJR Corporation/NJRC

IC REG LINEAR 8V 1.5A TO220F

IRG4BC20KDSTRRP

IRG4BC20KDSTRRP

Infineon Technologies

IGBT 600V 16A 60W D2PAK

ADP1708ACPZ-R7

ADP1708ACPZ-R7

Analog Devices

IC REG LINEAR POS ADJ 1A 8LFCSP

SI9706DY-T1-E3

SI9706DY-T1-E3

Vishay Siliconix

IC PCMCIA INTFACE SW 8SO