Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STD11NM60ND

STD11NM60ND

For Reference Only

Part Number STD11NM60ND
PNEDA Part # STD11NM60ND
Description MOSFET N-CH 600V 10A DPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 25,218
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD11NM60ND Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD11NM60ND
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD11NM60ND, STD11NM60ND Datasheet (Total Pages: 19, Size: 764.57 KB)
PDFSTI11NM60ND Datasheet Cover
STI11NM60ND Datasheet Page 2 STI11NM60ND Datasheet Page 3 STI11NM60ND Datasheet Page 4 STI11NM60ND Datasheet Page 5 STI11NM60ND Datasheet Page 6 STI11NM60ND Datasheet Page 7 STI11NM60ND Datasheet Page 8 STI11NM60ND Datasheet Page 9 STI11NM60ND Datasheet Page 10 STI11NM60ND Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STD11NM60ND Datasheet
  • where to find STD11NM60ND
  • STMicroelectronics

  • STMicroelectronics STD11NM60ND
  • STD11NM60ND PDF Datasheet
  • STD11NM60ND Stock

  • STD11NM60ND Pinout
  • Datasheet STD11NM60ND
  • STD11NM60ND Supplier

  • STMicroelectronics Distributor
  • STD11NM60ND Price
  • STD11NM60ND Distributor

STD11NM60ND Specifications

ManufacturerSTMicroelectronics
SeriesFDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 50V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FDBL86361-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

300A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

188nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12800pF @ 25V

FET Feature

-

Power Dissipation (Max)

429W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HPSOF

Package / Case

8-PowerSFN

HAT2088R-EL-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

440mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

SI5480DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 7.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1230pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFet Single

Package / Case

PowerPAK® ChipFET™ Single

SSM3J358R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 8V

Rds On (Max) @ Id, Vgs

22.1mOhm @ 6A, 8V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

38.5nC @ 8V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1331pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

IRLU7821PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

LTM2882HY-3#PBF

LTM2882HY-3#PBF

Linear Technology/Analog Devices

IC TXRX ISOL HALF 2/2 32BGA

LT1963AEST-3.3#PBF

LT1963AEST-3.3#PBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3

MMBT3904LT1G

MMBT3904LT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT23

AT24C1024BW-SH-T

AT24C1024BW-SH-T

Microchip Technology

IC EEPROM 1M I2C 1MHZ 8SOIC

7A-8.000MBBK-T

7A-8.000MBBK-T

TXC

CRYSTAL 8.0000MHZ 20PF SMD

S202T01

S202T01

Sharp Microelectronics

SSR RELAY SPST-NO 2A 80-240V

IRAMX16UP60B-2

IRAMX16UP60B-2

Infineon Technologies

IC PWR HYBRID 600V 16A SIP2

MAX16027TP+

MAX16027TP+

Maxim Integrated

IC SUPERVISORY CIRC TRPL 20TQFN

ST16C2552IJ44TR-F

ST16C2552IJ44TR-F

MaxLinear, Inc.

IC UART FIFO 16B DUAL 44PLCC

IRF630NPBF

IRF630NPBF

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-220AB

EPM7064STC44-10N

EPM7064STC44-10N

Intel

IC CPLD 64MC 10NS 44TQFP

CK45-R3AD222K-NRA

CK45-R3AD222K-NRA

TDK

CAP CER 2200PF 1KV RADIAL