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STD6NM60N-1

STD6NM60N-1

For Reference Only

Part Number STD6NM60N-1
PNEDA Part # STD6NM60N-1
Description MOSFET N-CH 600V 4.6A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,064
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD6NM60N-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD6NM60N-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD6NM60N-1, STD6NM60N-1 Datasheet (Total Pages: 19, Size: 692.71 KB)
PDFSTD6NM60N-1 Datasheet Cover
STD6NM60N-1 Datasheet Page 2 STD6NM60N-1 Datasheet Page 3 STD6NM60N-1 Datasheet Page 4 STD6NM60N-1 Datasheet Page 5 STD6NM60N-1 Datasheet Page 6 STD6NM60N-1 Datasheet Page 7 STD6NM60N-1 Datasheet Page 8 STD6NM60N-1 Datasheet Page 9 STD6NM60N-1 Datasheet Page 10 STD6NM60N-1 Datasheet Page 11

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STD6NM60N-1 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds420pF @ 50V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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