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STGYA120M65DF2

STGYA120M65DF2

For Reference Only

Part Number STGYA120M65DF2
PNEDA Part # STGYA120M65DF2
Description TRENCH GATE FIELD-STOP IGBT, M S
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 11,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGYA120M65DF2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGYA120M65DF2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGYA120M65DF2, STGYA120M65DF2 Datasheet (Total Pages: 17, Size: 987.19 KB)
PDFSTGYA120M65DF2 Datasheet Cover
STGYA120M65DF2 Datasheet Page 2 STGYA120M65DF2 Datasheet Page 3 STGYA120M65DF2 Datasheet Page 4 STGYA120M65DF2 Datasheet Page 5 STGYA120M65DF2 Datasheet Page 6 STGYA120M65DF2 Datasheet Page 7 STGYA120M65DF2 Datasheet Page 8 STGYA120M65DF2 Datasheet Page 9 STGYA120M65DF2 Datasheet Page 10 STGYA120M65DF2 Datasheet Page 11

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STGYA120M65DF2 Specifications

ManufacturerSTMicroelectronics
Series*
IGBT TypeNPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)160A
Current - Collector Pulsed (Icm)360A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 120A
Power - Max625W
Switching Energy1.8mJ (on), 4.41mJ (off)
Input TypeStandard
Gate Charge420nC
Td (on/off) @ 25°C66ns/185ns
Test Condition400V, 120A, 4.7Ohm, 15V
Reverse Recovery Time (trr)202ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Exposed Pad
Supplier Device PackageMAX247™

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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