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STH260N6F6-2

STH260N6F6-2

For Reference Only

Part Number STH260N6F6-2
PNEDA Part # STH260N6F6-2
Description MOSFET N-CH 60V 180A H2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,138
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STH260N6F6-2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTH260N6F6-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STH260N6F6-2, STH260N6F6-2 Datasheet (Total Pages: 14, Size: 725.16 KB)
PDFSTH260N6F6-2 Datasheet Cover
STH260N6F6-2 Datasheet Page 2 STH260N6F6-2 Datasheet Page 3 STH260N6F6-2 Datasheet Page 4 STH260N6F6-2 Datasheet Page 5 STH260N6F6-2 Datasheet Page 6 STH260N6F6-2 Datasheet Page 7 STH260N6F6-2 Datasheet Page 8 STH260N6F6-2 Datasheet Page 9 STH260N6F6-2 Datasheet Page 10 STH260N6F6-2 Datasheet Page 11

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STH260N6F6-2 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs183nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11800pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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