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STP12N50M2

STP12N50M2

For Reference Only

Part Number STP12N50M2
PNEDA Part # STP12N50M2
Description MOSFET N-CH 500V 10A TO-220AB
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,690
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP12N50M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP12N50M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP12N50M2, STP12N50M2 Datasheet (Total Pages: 13, Size: 618.02 KB)
PDFSTP12N50M2 Datasheet Cover
STP12N50M2 Datasheet Page 2 STP12N50M2 Datasheet Page 3 STP12N50M2 Datasheet Page 4 STP12N50M2 Datasheet Page 5 STP12N50M2 Datasheet Page 6 STP12N50M2 Datasheet Page 7 STP12N50M2 Datasheet Page 8 STP12N50M2 Datasheet Page 9 STP12N50M2 Datasheet Page 10 STP12N50M2 Datasheet Page 11

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STP12N50M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II Plus
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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