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STP12NM50N

STP12NM50N

For Reference Only

Part Number STP12NM50N
PNEDA Part # STP12NM50N
Description MOSFET N-CH 500V 11A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,982
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP12NM50N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP12NM50N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP12NM50N, STP12NM50N Datasheet (Total Pages: 19, Size: 591.13 KB)
PDFSTI12NM50N Datasheet Cover
STI12NM50N Datasheet Page 2 STI12NM50N Datasheet Page 3 STI12NM50N Datasheet Page 4 STI12NM50N Datasheet Page 5 STI12NM50N Datasheet Page 6 STI12NM50N Datasheet Page 7 STI12NM50N Datasheet Page 8 STI12NM50N Datasheet Page 9 STI12NM50N Datasheet Page 10 STI12NM50N Datasheet Page 11

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STP12NM50N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds940pF @ 50V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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