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STP31N65M5

STP31N65M5

For Reference Only

Part Number STP31N65M5
PNEDA Part # STP31N65M5
Description MOSFET N-CH 650V 22A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP31N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP31N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP31N65M5, STP31N65M5 Datasheet (Total Pages: 25, Size: 1,658.68 KB)
PDFSTW31N65M5 Datasheet Cover
STW31N65M5 Datasheet Page 2 STW31N65M5 Datasheet Page 3 STW31N65M5 Datasheet Page 4 STW31N65M5 Datasheet Page 5 STW31N65M5 Datasheet Page 6 STW31N65M5 Datasheet Page 7 STW31N65M5 Datasheet Page 8 STW31N65M5 Datasheet Page 9 STW31N65M5 Datasheet Page 10 STW31N65M5 Datasheet Page 11

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STP31N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds816pF @ 100V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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