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STP4NB80

STP4NB80

For Reference Only

Part Number STP4NB80
PNEDA Part # STP4NB80
Description MOSFET N-CH 800V 4A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP4NB80 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP4NB80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP4NB80, STP4NB80 Datasheet (Total Pages: 9, Size: 362.12 KB)
PDFSTP4NB80 Datasheet Cover
STP4NB80 Datasheet Page 2 STP4NB80 Datasheet Page 3 STP4NB80 Datasheet Page 4 STP4NB80 Datasheet Page 5 STP4NB80 Datasheet Page 6 STP4NB80 Datasheet Page 7 STP4NB80 Datasheet Page 8 STP4NB80 Datasheet Page 9

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STP4NB80 Specifications

ManufacturerSTMicroelectronics
SeriesPowerMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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