STS7N3LLH6
For Reference Only
| Part Number | STS7N3LLH6 |
| PNEDA Part # | STS7N3LLH6 |
| Description | MOSFET N-CH 30V 17A 8SOIC |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 3,600 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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STS7N3LLH6 Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | STS7N3LLH6 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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- Orders cannot be canceled after shipping the packages.
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STS7N3LLH6 Specifications
| Manufacturer | STMicroelectronics |
| Series | - |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 630mOhm @ 1A, 10V Vgs(th) (Max) @ Id 2.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 100pF @ 50V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3L Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 15A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 6.5mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 2846pF @ 10V FET Feature - Power Dissipation (Max) - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP (5.5x6.0) Package / Case 8-SOIC (0.173", 4.40mm Width) |
Manufacturer IXYS Series Polar™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1207pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
