Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STW18NK80Z

STW18NK80Z

For Reference Only

Part Number STW18NK80Z
PNEDA Part # STW18NK80Z
Description MOSFET N-CH 800V 19A TO-247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW18NK80Z Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW18NK80Z
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW18NK80Z, STW18NK80Z Datasheet (Total Pages: 14, Size: 302.44 KB)
PDFSTW18NK80Z Datasheet Cover
STW18NK80Z Datasheet Page 2 STW18NK80Z Datasheet Page 3 STW18NK80Z Datasheet Page 4 STW18NK80Z Datasheet Page 5 STW18NK80Z Datasheet Page 6 STW18NK80Z Datasheet Page 7 STW18NK80Z Datasheet Page 8 STW18NK80Z Datasheet Page 9 STW18NK80Z Datasheet Page 10 STW18NK80Z Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STW18NK80Z Datasheet
  • where to find STW18NK80Z
  • STMicroelectronics

  • STMicroelectronics STW18NK80Z
  • STW18NK80Z PDF Datasheet
  • STW18NK80Z Stock

  • STW18NK80Z Pinout
  • Datasheet STW18NK80Z
  • STW18NK80Z Supplier

  • STMicroelectronics Distributor
  • STW18NK80Z Price
  • STW18NK80Z Distributor

STW18NK80Z Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6100pF @ 25V
FET Feature-
Power Dissipation (Max)350W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

The Products You May Be Interested In

IRFR6215TRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

295mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RUC002N05T116

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SST3

Package / Case

TO-236-3, SC-59, SOT-23-3

SIHB22N60ET1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1920pF @ 100V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDBL0330N80

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

112nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6320pF @ 40V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HPSOF

Package / Case

8-PowerSFN

IPP048N04NGXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

DSPIC33FJ256GP710-I/PF

DSPIC33FJ256GP710-I/PF

Microchip Technology

IC MCU 16BIT 256KB FLASH 100TQFP

PIC18F2455-I/SO

PIC18F2455-I/SO

Microchip Technology

IC MCU 8BIT 24KB FLASH 28SOIC

ATMEGA32U4-MUR

ATMEGA32U4-MUR

Microchip Technology

IC MCU 8BIT 32KB FLASH 44VQFN

ATMEGA168PA-MUR

ATMEGA168PA-MUR

Microchip Technology

IC MCU 8BIT 16KB FLASH 32VQFN

ADM2484EBRWZ

ADM2484EBRWZ

Analog Devices

DGTL ISO 5KV RS422/RS485 16SOIC

DMG4468LFG-7

DMG4468LFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

ATMEGA32U2-AU

ATMEGA32U2-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

SRN8040TA-100M

SRN8040TA-100M

Bourns

FIXED IND 10UH 4.6A 33 MOHM SMD

M29W640FB70N6E

M29W640FB70N6E

Micron Technology Inc.

IC FLASH 64M PARALLEL 48TSOP

FLZ6V8A

FLZ6V8A

ON Semiconductor

DIODE ZENER 6.5V 500MW SOD80

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

MMSZ5231BT1G

MMSZ5231BT1G

ON Semiconductor

DIODE ZENER 5.1V 500MW SOD123