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STW70N60M2-4

STW70N60M2-4

For Reference Only

Part Number STW70N60M2-4
PNEDA Part # STW70N60M2-4
Description POWER MOSFET
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 7,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW70N60M2-4 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW70N60M2-4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW70N60M2-4, STW70N60M2-4 Datasheet (Total Pages: 13, Size: 1,022.07 KB)
PDFSTW70N60M2-4 Datasheet Cover
STW70N60M2-4 Datasheet Page 2 STW70N60M2-4 Datasheet Page 3 STW70N60M2-4 Datasheet Page 4 STW70N60M2-4 Datasheet Page 5 STW70N60M2-4 Datasheet Page 6 STW70N60M2-4 Datasheet Page 7 STW70N60M2-4 Datasheet Page 8 STW70N60M2-4 Datasheet Page 9 STW70N60M2-4 Datasheet Page 10 STW70N60M2-4 Datasheet Page 11

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STW70N60M2-4 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs118nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 100V
FET Feature-
Power Dissipation (Max)450W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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